STE22N80 Specs and Replacement
Type Designator: STE22N80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 88 nS
Cossⓘ - Output Capacitance: 1100(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: ISOTOP
STE22N80 substitution
- MOSFET ⓘ Cross-Reference Search
STE22N80 datasheet
Detailed specifications: STD8N10LT4 , STD8N10T4 , STE100N20 , STE150N10 , STE15N100 , STE16N100 , STE180N05 , STE180N10 , AON7408 , STE24N90 , STE250N05 , STE250N06 , STE26N50 , STE26NA90 , STE36N50 , STE36N50-DA , STE36N50-DK .
History: STE150N10
Keywords - STE22N80 MOSFET specs
STE22N80 cross reference
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STE22N80 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: STE150N10
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