IRF9956PBF MOSFET Datasheet: N-Ch, 30V, 3.5A. Full specification with pinout and replacement list

IRF9956PBF Specs and Replacement

Type Designator: IRF9956PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.8 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SO-8

IRF9956PBF substitution

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IRF9956PBF datasheet

..1. Size:169K international rectifier
irf9956pbf.pdf pdf_icon

PD - 95259 IRF9956PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual N-Channel MOSFET VDSS = 30V 2 7 l Surface Mount G1 D1 l Very Low Gate Charge and 3 6 S2 D2 Switching Losses 4 5 G2 D2 RDS(on) = 0.10 l Fully Avalanche Rated l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier Recommended upg... See More ⇒

7.1. Size:107K international rectifier
irf9956.pdf pdf_icon

PD - 9.1559A IRF9956 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 30V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Very Low Gate Charge and 4 5 G2 D2 Switching Losses RDS(on) = 0.10 Fully Avalanche Rated T op V iew Description Fifth Generation HEXFETs from International Rectifier Recommended upgrad... See More ⇒

8.1. Size:324K 1
auirf9952q.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF9952Q Features N-CHANNEL MOSFET Advanced Planar Technology N-CH P-CH 1 8 S1 D1 Low On-Resistance 2 7 G1 D1 Logic Level Gate Drive VDSS 30V -30V 3 6 S2 D2 Dual N and P Channel MOSFET 4 5 G2 D2 RDS(on) max. 0.10 0.25 Dynamic dv/dt Rating P-CHANNEL MOSFET 150 C Operating Temperature Top View ID 3.5A -2.3A... See More ⇒

8.2. Size:206K international rectifier
irf9953pbf.pdf pdf_icon

PD - 95477 IRF9953PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual P-Channel MOSFET VDSS = -30V 2 7 G1 D1 l Surface Mount 3 l Very Low Gate Charge and 6 S2 D2 Switching Losses 4 5 G2 D2 RDS(on) = 0.25 l Fully Avalanche Rated l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier Recommended ... See More ⇒