All MOSFET. IRFS23N15DPBF Datasheet

 

IRFS23N15DPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFS23N15DPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 37 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO263

 IRFS23N15DPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFS23N15DPBF Datasheet (PDF)

 ..1. Size:278K  infineon
 irfb23n15dpbf irfs23n15dpbf irfsl23n15dpbf.pdf

IRFS23N15DPBF IRFS23N15DPBF

PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F

 4.1. Size:142K  international rectifier
 irfs23n15d irfb23n15d irfsl23n15d.pdf

IRFS23N15DPBF IRFS23N15DPBF

PD - 93894AIRFB23N15D IRFS23N15DSMPS MOSFET IRFSL23N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090 23ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262 Fully Characterized Avalan

 4.2. Size:139K  international rectifier
 irfs23n15d.pdf

IRFS23N15DPBF IRFS23N15DPBF

PD - 93894AIRFB23N15D IRFS23N15DSMPS MOSFET IRFSL23N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090 23ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262 Fully Characterized Avalan

 4.3. Size:257K  inchange semiconductor
 irfs23n15d.pdf

IRFS23N15DPBF IRFS23N15DPBF

Isc N-Channel MOSFET Transistor IRFS23N15DFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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