All MOSFET. IRFSL31N20DP Datasheet

 

IRFSL31N20DP Datasheet and Replacement


   Type Designator: IRFSL31N20DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
   Package: TO-262
 

 IRFSL31N20DP substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRFSL31N20DP Datasheet (PDF)

 ..1. Size:290K  international rectifier
irfb31n20dpbf irfs31n20dp irfsl31n20dp.pdf pdf_icon

IRFSL31N20DP

IRFB31N20DPbFSMPS MOSFETIRFS31N20DPbFIRFSL31N20DPbFAppIications HEXFET Power MOSFETl High Frequency DC-DC convertersl Lead-FreeVDSS RDS(on) max ID200V 0.082 31ABenefitsl Low Gate to Drain to Reduce SwitchingLossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design,(SeeAN 1001)l Fully Characterized Avalanche Voltageand Cur

 0.1. Size:290K  international rectifier
irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf.pdf pdf_icon

IRFSL31N20DP

IRFB31N20DPbFSMPS MOSFETIRFS31N20DPbFIRFSL31N20DPbFAppIications HEXFET Power MOSFETl High Frequency DC-DC convertersl Lead-FreeVDSS RDS(on) max ID200V 0.082 31ABenefitsl Low Gate to Drain to Reduce SwitchingLossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design,(SeeAN 1001)l Fully Characterized Avalanche Voltageand Cur

 3.1. Size:256K  inchange semiconductor
irfsl31n20d.pdf pdf_icon

IRFSL31N20DP

Isc N-Channel MOSFET Transistor IRFSL31N20DFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

 7.1. Size:371K  international rectifier
irfs3107pbf irfsl3107pbf.pdf pdf_icon

IRFSL31N20DP

PD -97144AIRFS3107PbFIRFSL3107PbFHEXFET Power MOSFETApplicationsDVDSS75Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.5m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)230A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dyn

Datasheet: IRFHM8326PBF , IRFHM8329PBF , IRFI7446GPBF , IRFP140NPBF , IRFR3707ZPBF , IRFS23N15DPBF , IRFS31N20DP , IRFSL23N20DPBF , IRFZ46N , IRFSL33N15DPBF , IRFSL41N15DPBF , IRFSL52N15DPBF , IRFSL59N10DPBF , IRFU18N15DPBF , IRFU2407PBF , IRFU24N15DPBF , IRFU3303PBF .

History: SI9435DY-T1 | IRLL2705TR | IRL640PBF | IXTP230N04T4M | FQPF12P10 | WMM95P06TS | RU30110M

Keywords - IRFSL31N20DP MOSFET datasheet

 IRFSL31N20DP cross reference
 IRFSL31N20DP equivalent finder
 IRFSL31N20DP lookup
 IRFSL31N20DP substitution
 IRFSL31N20DP replacement

 

 
Back to Top

 


 
.