IRFSL59N10DPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFSL59N10DPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 59 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 740 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO-262
IRFSL59N10DPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFSL59N10DPBF Datasheet (PDF)
irfb59n10dpbf irfs59n10dpbf irfsl59n10dpbf.pdf
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PD - 95378IRFB59N10DPbF IRFS59N10DPbFSMPS MOSFET IRFSL59N10DPbFHEXFET Power MOSFETApplicationsl High frequency DC-DC convertersVDSS RDS(on) max IDl UPS / Motor Control Inverters 100V 0.025 59Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1
irfsl59n10d.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL59N10DFEATURESStatic drain-source on-resistance:RDS(on) 0.025Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS
irfsl52n15d.pdf
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PD - 94357AIRFB52N15D IRFS52N15DSMPS MOSFET IRFSL52N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters150V 0.032 60ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand Current
irfs5615pbf irfsl5615pbf.pdf
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PD - 96204DIGITAL AUDIO MOSFET IRFS5615PbFIRFSL5615PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS150 V Amplifier ApplicationsRDS(ON) typ. @ 10V m34.5 Low RDSON for Improved EfficiencyQg typ.26 nC Low QG and QSW for Better THD and Improved Qsw typ.11 nCRG(int) typ. Efficiency 2.7 TJ max175 C Low QRR for Better THD
irfs5620pbf irfsl5620pbf.pdf
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PD - 96205DIGITAL AUDIO MOSFETIRFS5620PbFFeatures IRFSL5620PbF Key Parameters Optimized for Class-D AudioKey Parameters Amplifier ApplicationsVDS200 V Low RDSON for Improved EfficiencyRDS(ON) typ. @ 10V m63.7 Low QG and QSW for Better THD and ImprovedQg typ.25 nC EfficiencyQsw typ.9.8 nC Low QRR for Better THD and Lower EMI RG(int) typ. 2.6
irfb52n15dpbf irfs52n15dpbf irfsl52n15dpbf.pdf
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PD - 97002AIRFB52N15DPbFIRFS52N15DPbFIRFSL52N15DPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersKey Parametersl Plasma Display PanelVDS 150 VVDS (Avalanche) min. 200 VBenefitsRDS(ON) max @ 10V 32 ml Low Gate-to-Drain Charge toTJ maxReduce\ Switching Losses 175 Cl Fully Characterized Capacitance Including Effective COSS to SimplifyDesign
irfsl52n15d.pdf
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isc N-Channel MOSFET Transistor IRFSL52N15DFEATURESStatic drain-source on-resistance:RDS(on)32mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDS
irfsl5615.pdf
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Isc N-Channel MOSFET Transistor IRFSL5615FEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 15
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![IRFSL59N10DPBF](https://alltransistors.com/images/us.png)
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![IRFSL59N10DPBF](https://alltransistors.com/images/ru.png)
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