ISP25DP06LMS Datasheet and Replacement
Type Designator: ISP25DP06LMS
Marking Code: 25DP06LS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 1.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 13.9 nC
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT223
ISP25DP06LMS substitution
ISP25DP06LMS Datasheet (PDF)
isp25dp06lms.pdf

ISP25DP06LMSMOSFETPG-SOT223-3OptiMOSTM Small Signal Transistor, -60 VFeatures P-Channel Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Logic Level Enhancement mode Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified according to JEDEC StandardDrainPin 2GateTable 1 Key
isp25dp06lm.pdf

ISP25DP06LMMOSFETSOT-223-4OptiMOSTM Small Signal Transistor, -60 VFeatures 4 P-Channel Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Logic Level1 Enhancement mode2 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 3Product validationFully qualified according to JEDEC for Industrial Applications
isp25dp06nm.pdf

ISP25DP06NMMOSFETSOT-223-4OptiMOSTM Small Signal Transistor, -60 VFeatures 4 P-Channel Very low on-resistance RDS(on) 100% avalanche tested Normal Level1 Enhancement mode2 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 3Product validationFully qualified according to JEDEC for Industrial ApplicationsDrainPin 2
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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