LPM3406B3F PDF and Equivalents Search

 

LPM3406B3F Specs and Replacement

Type Designator: LPM3406B3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.5 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 typ Ohm

Package: SOT23

LPM3406B3F substitution

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LPM3406B3F datasheet

 ..1. Size:228K  lowpower
 lpm3406b3f.pdf pdf_icon

LPM3406B3F

Preliminary Datasheet LPM3406 30V/3.6A N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3406 is N-channel logic enhancement mode 30V/3A, R =48m (Typ.)@VGS=4.5V DS(ON) power field effect transistor, which are produced by 30V/3.6A, R =36m (Typ.)@VGS=10V DS(ON) using high cell density, DMOS trench technology. Super high density cell d... See More ⇒

 8.1. Size:375K  lowpower
 lpm3401.pdf pdf_icon

LPM3406B3F

Preliminary Datasheet LPM3401 15V/4A P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3401 is the P-channel logic enhancement -15V/-4.0A,RDS(ON) 58m (typ.)@VGS=-10V mode power field effect transistors are produced using -15V/-3.0A,RDS(ON) 68m (typ.)@VGS=-4.5V high cell density, DMOS trench technology. Super high density cell desi... See More ⇒

 8.2. Size:876K  lowpower
 lpm3400b3f.pdf pdf_icon

LPM3406B3F

Preliminary Datasheet LPM3400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3400 uses advanced trench technology to 20V/5A, R 33m (max.)@VGS=4.5V DS(ON) provide excellent R , low gate charge and 20V/4A, R 52m (max.)@VGS=2.5V DS(ON) DS(ON) operation with gate voltages as low as 1.1V. This Super high density cell design for ... See More ⇒

 9.1. Size:396K  lowpower
 lpm3413.pdf pdf_icon

LPM3406B3F

Preliminary Datasheet LPM3413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3413 uses advanced trench technology to -20V/2.0A,R 130m (max.)@VGS=-2.5V DS(ON) provide excellent R . This device is suitable for -20V/3A,R 95m (max.)@VGS=-4.5V DS(ON) DS(ON) using as a load switch or in PWM applications. Super high density cell... See More ⇒

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Detailed specifications: ISZ065N03L5S, ISZ0901NLS, SIHFP450A, SIHFP450LC, SIHFP460LC, LPM2301B3F, LPM2302B3F, LPM3401, IRLZ44N, LPM3400B3F, LPM3413, LPM4953, LPM8205B6F, LPM8205TSF, LPM9021QVF, LPM9029C, LPM9030

Keywords - LPM3406B3F MOSFET specs

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