All MOSFET. LPM9030 Datasheet

 

LPM9030 Datasheet and Replacement


   Type Designator: LPM9030
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.8 nS
   Cossⓘ - Output Capacitance: 81 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP8
 

 LPM9030 substitution

   - MOSFET ⓘ Cross-Reference Search

 

LPM9030 Datasheet (PDF)

 ..1. Size:1142K  lowpower
lpm9030.pdf pdf_icon

LPM9030

Preliminary Datasheet LPM9030 N-Ch and P-Ch Fast Switching MOSFETs General Description Features 100% EAS Guaranteed The LPM9030 is the high performance complementary N-ch and P-ch MOSFETs with high cell density, which Green Device Available provide excellent RDSON and gate charge for most of Super Low Gate Charge the synchronous buck converter applications. Exc

 8.1. Size:1215K  lowpower
lpm9031sof lpm9031qvf.pdf pdf_icon

LPM9030

Preliminary Datasheet LPM9031 Dual channel N-Channel MOSFEGeneral Description Features 100% EAS Guaranteed The LPM9031 is a dual channel MOSFET, which combines advanced trench MOSFET technology Green Device Available with a low resistance package to provide extremely Super Low Gate Charge low RDS(ON). This device is suitable for use as a load Excellent CdV/dt e

 8.2. Size:1144K  lowpower
lpm9033qvf.pdf pdf_icon

LPM9030

Preliminary Datasheet LPM9033 Dual channel 30V N-Channel MOSFET General Description Features 100% EAS Guaranteed The LPM9033 is a dual channel MOSFET, which uses advanced trench technology to provide excellent Green Device Available R with low gate charge. Each channel has all the DS(ON) Super Low Gate Charge features. This is an all purpose device that is suitable

 9.1. Size:338K  lowpower
lpm9029c.pdf pdf_icon

LPM9030

Preliminary Datasheet LPM9029C N and P-Channel Enhancement Power MOSFET General Description Features The LPM9029C integrates N-Channel and P-Channel Trench Technology enhancement MOSFET Transistor. It uses advanced NMOS: trench technology and design to provide excellent V =20V, I =12A NDS NDR with low gate charge. This device is suitable R

Datasheet: LPM3406B3F , LPM3400B3F , LPM3413 , LPM4953 , LPM8205B6F , LPM8205TSF , LPM9021QVF , LPM9029C , IRFB4110 , LPM9031SOF , LPM9031QVF , LPM9033QVF , LPM9040A , LPM9042 , LPM9435 , LPM9926SOF , 2KJ7107DFN .

History: TPB65R070D | NCE1205 | LPM9040A | SM1F12NSKP | HM4444 | TK65S04K3L | IXTQ10P50P

Keywords - LPM9030 MOSFET datasheet

 LPM9030 cross reference
 LPM9030 equivalent finder
 LPM9030 lookup
 LPM9030 substitution
 LPM9030 replacement

 

 
Back to Top

 


 
.