LPM9031QVF PDF and Equivalents Search

 

LPM9031QVF Specs and Replacement

Type Designator: LPM9031QVF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: DFN8

LPM9031QVF substitution

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LPM9031QVF datasheet

 ..1. Size:1215K  lowpower
lpm9031sof lpm9031qvf.pdf pdf_icon

LPM9031QVF

Preliminary Datasheet LPM9031 Dual channel N-Channel MOSFE General Description Features 100% EAS Guaranteed The LPM9031 is a dual channel MOSFET, which combines advanced trench MOSFET technology Green Device Available with a low resistance package to provide extremely Super Low Gate Charge low RDS(ON). This device is suitable for use as a load Excellent CdV/dt e... See More ⇒

 8.1. Size:1142K  lowpower
lpm9030.pdf pdf_icon

LPM9031QVF

Preliminary Datasheet LPM9030 N-Ch and P-Ch Fast Switching MOSFETs General Description Features 100% EAS Guaranteed The LPM9030 is the high performance complementary N-ch and P-ch MOSFETs with high cell density, which Green Device Available provide excellent RDSON and gate charge for most of Super Low Gate Charge the synchronous buck converter applications. Exc... See More ⇒

 8.2. Size:1144K  lowpower
lpm9033qvf.pdf pdf_icon

LPM9031QVF

Preliminary Datasheet LPM9033 Dual channel 30V N-Channel MOSFET General Description Features 100% EAS Guaranteed The LPM9033 is a dual channel MOSFET, which uses advanced trench technology to provide excellent Green Device Available R with low gate charge. Each channel has all the DS(ON) Super Low Gate Charge features. This is an all purpose device that is suitable ... See More ⇒

 9.1. Size:338K  lowpower
lpm9029c.pdf pdf_icon

LPM9031QVF

Preliminary Datasheet LPM9029C N and P-Channel Enhancement Power MOSFET General Description Features The LPM9029C integrates N-Channel and P-Channel Trench Technology enhancement MOSFET Transistor. It uses advanced NMOS trench technology and design to provide excellent V =20V, I =12A NDS ND R with low gate charge. This device is suitable R ... See More ⇒

Detailed specifications: LPM3413, LPM4953, LPM8205B6F, LPM8205TSF, LPM9021QVF, LPM9029C, LPM9030, LPM9031SOF, 2N7000, LPM9033QVF, LPM9040A, LPM9042, LPM9435, LPM9926SOF, 2KJ7107DFN, 2KK5016, AO6401-HF

Keywords - LPM9031QVF MOSFET specs

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