All MOSFET. ME2306A Datasheet

 

ME2306A MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME2306A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 5.38 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.5 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SOT-23

 ME2306A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME2306A Datasheet (PDF)

 ..1. Size:1203K  matsuki electric
 me2306a me2306a-g.pdf

ME2306A ME2306A

ME2306A/ME2306A-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306A is the N-Channel logic enhancement mode power field RDS(ON)34.5m@VGS=10V effect transistors, using high cell density, DMOS trench technology. RDS(ON)38m@VGS=4.5V This high density process is especially tailored to minimize on-state RDS(ON)50m@VGS=2.5V resistance. Su

 0.1. Size:730K  matsuki electric
 me2306an me2306an-g.pdf

ME2306A ME2306A

Preliminary-ME2306AN/ME2306AN-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTIONFEATURES The ME2306AN is the N-Channel logic enhancement mode power RDS(ON)37m@VGS=10Vfield effect transistors, using high cell density, DMOS trench RDS(ON)40m@VGS=4.5Vtechnology. This high density process is especially tailored to RDS(ON)53m@VGS=2.5Vminimize on-state r

 0.2. Size:1039K  matsuki electric
 me2306as me2306as-g.pdf

ME2306A ME2306A

ME2306AS/ME2306AS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306AS is the N-Channel logic enhancement mode power RDS(ON)34.5m@VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON)38m@VGS=4.5V technology.This high density process is especially tailored to RDS(ON)50m@VGS=2.5V minimize on-state resistance.These

 8.1. Size:1599K  matsuki electric
 me2306bs me2306bs-g.pdf

ME2306A ME2306A

ME2306BS/ME2306BS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306BS is the N-Channel logic enhancement mode power RDS(ON)38m@VGS=10V field effect transistor, using high cell density, DMOS trench RDS(ON)43m@VGS=4.5V technology. This high density process is especially tailored to RDS(ON)62m@VGS=2.5V minimize on-state resistance. These

 8.2. Size:879K  matsuki electric
 me2306n me2306n-g.pdf

ME2306A ME2306A

ME2306N/ME2306N-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2306N is the N-Channel logic enhancement mode power RDS(ON)37m@VGS=10Vfield effect transistors, using high cell density, DMOS trench RDS(ON)49m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)mi

 8.3. Size:1294K  matsuki electric
 me2306s me2306s-g.pdf

ME2306A ME2306A

ME2306S/ME2306S-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES FEATURES RDS(ON)37m@ VGS =10V The ME2306S is the N-Channel logic enhancement mode power RDS(ON)49m@VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailor

 8.4. Size:1115K  matsuki electric
 me2306ds me2306ds-g.pdf

ME2306A ME2306A

ME2306DS/ME2306DS-G N-Channel 30V (D-S) MOSFET , ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2306DS is the N-Channel logic enhancement mode power RDS(ON)31m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)52m@VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state

 8.5. Size:1457K  matsuki electric
 me2306d me2306d-g.pdf

ME2306A ME2306A

ME2306D/ME2306D-G N-Channel 30V (D-S) MOSFET , ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2306D is the N-Channel logic enhancement mode power RDS(ON)31m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)52m@VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state res

 8.6. Size:1045K  matsuki electric
 me2306 me2306-g.pdf

ME2306A ME2306A

ME2306/ME2306-G N-Channel Enhancement Mode MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)37m@VGS=10V The ME2306 is the N-Channel logic enhancement mode power field RDS(ON)49m@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to

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