ME2325 MOSFET Datasheet: P-Ch, 30V, 4.3A. Full specification with pinout and replacement list

ME2325 Specs and Replacement

Type Designator: ME2325

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43.2 nS

Cossⓘ - Output Capacitance: 91.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT-23

ME2325 substitution

- MOSFET ⓘ Cross-Reference Search

ME2325 datasheet

..1. Size:1062K matsuki electric
me2325 me2325-g.pdf pdf_icon

ME2325/ME2325-G P-Channel 30V (D-S) MOSFET MOSFET GENERAL DESCRIPTION FEATURES The ME2325 is the P-Channel logic enhancement mode power field RDS(ON) 50m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 76m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low ... See More ⇒

0.1. Size:1293K matsuki electric
me2325s me2325s-g.pdf pdf_icon

ME2325S/ME2325S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 50m @VGS=-10V The ME2325S is the P-Channel logic enhancement mode power field RDS(ON) 76m @VGS=-4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially ... See More ⇒

9.1. Size:1219K matsuki electric
me2323d me2323d-g.pdf pdf_icon

ME2323D/ME2323D-G P-Channel 20-V (D-S) MOSFET ESD Protection GENERAL DESCRIPTION FEATURES The ME2323D(-G) is the P-Channel logic enhancement mode power RDS(ON) 50m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 65m @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON) 75m @VGS=-1.8... See More ⇒

9.2. Size:1114K matsuki electric
me2328 me2328-g.pdf pdf_icon

ME2328/ME2328-G N - Channel 105-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 270m @VGS=10V The ME2328 is the N-Channel logic enhancement mode power field RDS(ON) 340m @VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especiall... See More ⇒