ME4411 MOSFET. Datasheet pdf. Equivalent
Type Designator: ME4411
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 12.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 83.2 nC
trⓘ - Rise Time: 20.9 nS
Cossⓘ - Output Capacitance: 468 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: SOP-8
ME4411 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME4411 Datasheet (PDF)
me4411 me4411-g.pdf
ME4411/ME4411-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4411-G is the P-Channel logic enhancement mode power RDS(ON)10m@VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON)13m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD
me4410ad.pdf
ME4410ADwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO
me4410a.pdf
ME4410A N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The ME4410A is the N-Channel logic enhancement mode power RDS(ON)20m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored
me4413d me4413d-g.pdf
ME4413D/ME4413D-G P-Channel Enhancement Mode Mosfet , ESD ProtectionGENERAL DESCRIPTION FEATURES RDS(ON) 13m@VGS=-4.5VThe ME4413D is the P-Channel logic enhancement mode power RDS(ON) 17m@VGS=-2.5Vfield effect transistors are produced using high cell density , DMOS RDS(ON) 26m@VGS=-1.8Vtrench technology. This high density process is especially tailo
me4410ad.pdf
ME4410ADwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO
me4410.pdf
ME4410www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-8
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
