All MOSFET. ME4411 Datasheet

 

ME4411 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME4411
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 12.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 83.2 nC
   trⓘ - Rise Time: 20.9 nS
   Cossⓘ - Output Capacitance: 468 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SOP-8

 ME4411 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME4411 Datasheet (PDF)

 ..1. Size:1245K  matsuki electric
 me4411 me4411-g.pdf

ME4411 ME4411

ME4411/ME4411-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4411-G is the P-Channel logic enhancement mode power RDS(ON)10m@VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON)13m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD

 9.1. Size:2143K  1
 me4410ad.pdf

ME4411 ME4411

ME4410ADwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

 9.2. Size:667K  1
 me4410a.pdf

ME4411 ME4411

ME4410A N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The ME4410A is the N-Channel logic enhancement mode power RDS(ON)20m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored

 9.3. Size:1807K  matsuki electric
 me4413d me4413d-g.pdf

ME4411 ME4411

ME4413D/ME4413D-G P-Channel Enhancement Mode Mosfet , ESD ProtectionGENERAL DESCRIPTION FEATURES RDS(ON) 13m@VGS=-4.5VThe ME4413D is the P-Channel logic enhancement mode power RDS(ON) 17m@VGS=-2.5Vfield effect transistors are produced using high cell density , DMOS RDS(ON) 26m@VGS=-1.8Vtrench technology. This high density process is especially tailo

 9.4. Size:2143K  cn vbsemi
 me4410ad.pdf

ME4411 ME4411

ME4410ADwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

 9.5. Size:2143K  cn vbsemi
 me4410.pdf

ME4411 ME4411

ME4410www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-8

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top