STH12N60FI Datasheet and Replacement
Type Designator: STH12N60FI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 145 nC
tr ⓘ - Rise Time: 80(max) nS
Cossⓘ - Output Capacitance: 400(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: ISOWATT218
STH12N60FI substitution
STH12N60FI Datasheet (PDF)
sth12n120k5-2 stp12n120k5 .pdf

STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 typ.,12 A MDmesh K5 Power MOSFETs in HPAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V R max. I P DS DS(on) D TOTSTH12N120K5-2 STP12N120K5 2PAK-2H TO-2201200 V 0.69 12 A 250 W STW12N120K5 STWA12N120K5 Worldwide best FOM (figure of m
sth12na60.pdf

STH12NA60/FISTW12NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTH12NA60 600 V
stw12n120k5 stwa12n120k5 sth12n120k5 stp12n120k5.pdf

STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 typ.,12 A MDmesh K5 Power MOSFETs in HPAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V R max. I P DS DS(on) D TOTSTH12N120K5-2 STP12N120K5 2PAK-2H TO-2201200 V 0.69 12 A 250 W STW12N120K5 STWA12N120K5 Worldwide best FOM (figure of m
Datasheet: STE45N50 , STE47N50 , STE50N40 , STE53NA50 , STE90N25 , STH10NA50 , STH10NA50FI , STH12N60 , IRLZ44N , STH12NA60 , STH12NA60FI , STH14N50 , STH14N50FI , STH15N50 , STH15N50FI , STH15NA50 , STH15NA50FI .
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