ME4435-G Specs and Replacement
Type Designator: ME4435-G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16.7 nS
Cossⓘ - Output Capacitance: 209 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP-8
ME4435-G substitution
- MOSFET ⓘ Cross-Reference Search
ME4435-G datasheet
me4435 me4435-g.pdf
ME4435/ME4435-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4435 is the P-Channel logic enhancement mode power field RDS(ON) 22m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 35m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)... See More ⇒
Detailed specifications: ME35N10-G, ME4174, ME4174-G, ME4411, ME4411-G, ME4413D, ME4413D-G, ME4435, AOD4184A, ME4454, ME4454-G, ME4542, ME4542-G, ME4548, ME4548-G, ME4565, ME4565A
Keywords - ME4435-G MOSFET specs
ME4435-G cross reference
ME4435-G equivalent finder
ME4435-G pdf lookup
ME4435-G substitution
ME4435-G replacement
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History: VBA2311
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