All MOSFET. ME4435-G Datasheet

 

ME4435-G Datasheet and Replacement


   Type Designator: ME4435-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16.7 nS
   Cossⓘ - Output Capacitance: 209 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP-8
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ME4435-G Datasheet (PDF)

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ME4435-G

ME4435/ME4435-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME4435 is the P-Channel logic enhancement mode power field RDS(ON)22m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON)35m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

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History: BSZ035N03LSG | SVF9N90F

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