ME4435-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME4435-G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 8.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 38 nC
trⓘ - Rise Time: 16.7 nS
Cossⓘ - Output Capacitance: 209 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP-8
ME4435-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME4435-G Datasheet (PDF)
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me4435 me4435-g.pdf
me4435 me4435-g.pdf
ME4435/ME4435-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME4435 is the P-Channel logic enhancement mode power field RDS(ON)22m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON)35m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
