All MOSFET. ME4548 Datasheet

 

ME4548 Datasheet and Replacement


   Type Designator: ME4548
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP-8
 

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ME4548 Datasheet (PDF)

 ..1. Size:1677K  matsuki electric
 me4548 me4548-g.pdf pdf_icon

ME4548

ME4548/ME4548-G Dual N- and P-Channel 30-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME4548 is the dual N- and P-Channel logic enhancement RDS(ON) 18 m@VGS=10V (N-Ch)mode power field effect transistors are produced using high cell RDS(ON) 29 m@VGS=4.5V(N-Ch)density, DMOS trench technology. This high density process is RDS(ON) 22m@VGS=-10V(P-Ch)espe

 9.1. Size:1411K  matsuki electric
 me4542 me4542-g.pdf pdf_icon

ME4548

ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)25m@VGS=10V (N-Ch) The ME4542 is the N and P Channel logic enhancement mode RDS(ON)40m@VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON)35m@VGS=-10V (P-Ch) DMOS trench technology. This high density process is especially

Datasheet: ME4413D , ME4413D-G , ME4435 , ME4435-G , ME4454 , ME4454-G , ME4542 , ME4542-G , BS170 , ME4548-G , ME4565 , ME4565A , ME4565A-G , ME4565AD4 , ME4565AD4-G , ME45N03T , ME45N03T-G .

History: TPC8401 | SSF2341E | STD35NF3LLT4 | IXTT140N10P | SM2304NSA | NCE01P18L | BMS3004

Keywords - ME4548 MOSFET datasheet

 ME4548 cross reference
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