STH12NA60 MOSFET Datasheet: N-Ch, 600V, 12A. Full specification with pinout and replacement list

STH12NA60 Specs and Replacement

Type Designator: STH12NA60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 310 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO218

STH12NA60 substitution

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STH12NA60 datasheet

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STH12NA60/FI STW12NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STH12NA60 600 V ... See More ⇒

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STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 typ.,12 A MDmesh K5 Power MOSFETs in H PAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V R max. I P DS DS(on) D TOT STH12N120K5-2 STP12N120K5 2PAK-2 H TO-220 1200 V 0.69 12 A 250 W STW12N120K5 STWA12N120K5 Worldwide best FOM (figure of m... See More ⇒

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