All MOSFET. ME4565 Datasheet

 

ME4565 Datasheet and Replacement


   Type Designator: ME4565
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 43 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOP-8
 

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ME4565 Datasheet (PDF)

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ME4565

ME4565 N- and P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4565 is the N- and P-Channel logic enhancement mode RDS(ON)40m@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON)45m@VGS=4.5V (N-Ch) DMOS trench technology. This high density process is especially RDS(ON)54m@VGS=-10V (P-Ch) tailored to

 0.1. Size:1600K  matsuki electric
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ME4565

ME4565AD4/ME4565AD4-G N- and P-Channel 40-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON) 30m@VGS=10V (N-Ch) The ME4565AD4 is the N and P-Channel logic enhancement mode RDS(ON) 58m@VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 45m@VGS=-10V (P-Ch) DMOS trench technology. This high density process is

 0.2. Size:1171K  matsuki electric
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ME4565

ME4565A/ ME4565A-G N- and P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 26.5m@VGS=10V (N-Ch) The ME4565A is the N and P-Channel logic enhancement mode RDS(ON) 45m@VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 44m@VGS=-10V (P-Ch) DMOS trench technology. This high density process is es

Datasheet: ME4435 , ME4435-G , ME4454 , ME4454-G , ME4542 , ME4542-G , ME4548 , ME4548-G , IRF3205 , ME4565A , ME4565A-G , ME4565AD4 , ME4565AD4-G , ME45N03T , ME45N03T-G , ME45P04 , ME45P04-G .

History: HAF1002L | AFN1304 | BSL302SN | AFN3606S | PA910BM | DCCF016M120G3 | CMLDM7484

Keywords - ME4565 MOSFET datasheet

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