ME4565A MOSFET. Datasheet pdf. Equivalent
Type Designator: ME4565A
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 6.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 76 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0265 Ohm
Package: SOP-8
ME4565A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME4565A Datasheet (PDF)
me4565a me4565a-g.pdf
ME4565A/ ME4565A-G N- and P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 26.5m@VGS=10V (N-Ch) The ME4565A is the N and P-Channel logic enhancement mode RDS(ON) 45m@VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 44m@VGS=-10V (P-Ch) DMOS trench technology. This high density process is es
me4565ad4 me4565ad4-g.pdf
ME4565AD4/ME4565AD4-G N- and P-Channel 40-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON) 30m@VGS=10V (N-Ch) The ME4565AD4 is the N and P-Channel logic enhancement mode RDS(ON) 58m@VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 45m@VGS=-10V (P-Ch) DMOS trench technology. This high density process is
me4565.pdf
ME4565 N- and P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4565 is the N- and P-Channel logic enhancement mode RDS(ON)40m@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON)45m@VGS=4.5V (N-Ch) DMOS trench technology. This high density process is especially RDS(ON)54m@VGS=-10V (P-Ch) tailored to
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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