ME4925 PDF and Equivalents Search

 ..1. Size:1135K  matsuki electric
 me4925 me4925-g.pdf

ME4925/ME4925-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4925 is the Dual P-Channel logic enhancement mode power RDS(ON) 22m @VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON) 30m @VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely ... See More ⇒

 ..2. Size:829K  cn vbsemi
 me4925.pdf

ME4925 www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD 1 8 ... See More ⇒

 9.1. Size:892K  matsuki electric
 me4920 me4920-g.pdf

ME4920/ME4920-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 35 m @VGS=10V The ME4920 is the N-Channel logic enhancement mode power field RDS(ON) 45 m @VGS=4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to ... See More ⇒