ME4946-G Datasheet and Replacement. Cross Reference Search

ME4946-G Datasheet (PDF)

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ME4946/ME4946-G Dual N-Channel 60-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)41m@VGS=10V The ME4946 is the Dual N-Channel logic enhancement mode power RDS(ON)52m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especi

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ME4946www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel M

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ME4947/ME4947-G P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4947 is the P-Channel logic enhancement mode power field RDS(ON)72m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)94m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .