ME4946-G Datasheet and Replacement. Cross Reference Search

ME4946-G Datasheet (PDF)

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ME4946/ME4946-G Dual N-Channel 60-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)41m@VGS=10V The ME4946 is the Dual N-Channel logic enhancement mode power RDS(ON)52m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especi

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ME4946www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel M

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ME4947/ME4947-G P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4947 is the P-Channel logic enhancement mode power field RDS(ON)72m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)94m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

Datasheet: ME45P04-G , ME4626 , ME4626-G , ME4825 , ME4825-G , ME4925 , ME4925-G , ME4946 , AON6414A , ME4953-G , ME4954 , ME4954-G , ME4970-G , ME50N06A , ME50N06A-G , ME50N06T , ME50N06T-G .