All MOSFET. ME50N06T Datasheet

 

ME50N06T Datasheet and Replacement


   Type Designator: ME50N06T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 53 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 197 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-220
 

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ME50N06T Datasheet (PDF)

 ..1. Size:1138K  matsuki electric
 me50n06t me50n06t-g.pdf pdf_icon

ME50N06T

ME50N06T/ME50N06T-GN-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)22m@VGS=10V The ME50N06T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densit

 7.1. Size:1310K  matsuki electric
 me50n06a me50n06a-g.pdf pdf_icon

ME50N06T

ME50N06A/ME50N06A-G N- Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME50N06A is the N-Channel logic enhancement mode power RDS(ON)22m@VGS=10V field effect transistors are produced using high cell density DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-resi

 8.1. Size:1050K  matsuki electric
 me50n02 me50n02-g.pdf pdf_icon

ME50N06T

ME50N02 / ME50N02-G N- Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)8m@VGS=10V The ME50N02 is the N-Channel logic enhancement mode power RDS(ON)9m@VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)12m@VGS=2.5V trench technology. This high density process is especially tailored to Super high den

 9.1. Size:1250K  matsuki electric
 me50n75t me50n75t-g.pdf pdf_icon

ME50N06T

ME50N75T/ME50N75T-GN-Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)26m@VGS=10V The ME50N75T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densit

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Datasheet: ME4946 , ME4946-G , ME4953-G , ME4954 , ME4954-G , ME4970-G , ME50N06A , ME50N06A-G , 8205A , ME50N06T-G , ME50N75T , ME50N75T-G , ME50P06 , ME50P06-G , ME55N06A , ME55N06A-G , ME60N03-G .

History: JMTV2305A

Keywords - ME50N06T MOSFET datasheet

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