STH14N50FI Specs and Replacement
Type Designator: STH14N50FI
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 340 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: ISOWATT218
STH14N50FI substitution
- MOSFET ⓘ Cross-Reference Search
STH14N50FI datasheet
sth140n8f7-2.pdf
STH140N8F7-2 N-channel 80 V, 3.3 m typ., 90 A STripFET F7 Power MOSFET in a H2PAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH140N8F7-2 80 V 4 m 90 A 200 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applicati... See More ⇒
sth140n6f7.pdf
STH140N6F7-2, STH140N6F7-6 N-channel 60 V, 0.0028 typ., 80 A STripFET F7 Power MOSFETs in H PAK-2 and H PAK-6 packages Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH140N6F7-2 60 V 0.0032 80 A 158 W STH140N6F7-6 Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity ... See More ⇒
isth140n6f7.pdf
Isc N-Channel MOSFET Transistor ISTH140N6F7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
Detailed specifications: STE90N25 , STH10NA50 , STH10NA50FI , STH12N60 , STH12N60FI , STH12NA60 , STH12NA60FI , STH14N50 , AON7506 , STH15N50 , STH15N50FI , STH15NA50 , STH15NA50FI , STH26N25 , STH26N25FI , STH33N20 , STH33N20FI .
Keywords - STH14N50FI MOSFET specs
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