ME7804S-G PDF and Equivalents Search

 

ME7804S-G Specs and Replacement

Type Designator: ME7804S-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.5 nS

Cossⓘ - Output Capacitance: 94 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: DFN3.3X3.3

ME7804S-G substitution

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ME7804S-G datasheet

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ME7804S-G

ME7804S-G N-Channel 30V (D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES RDS(ON) 16m @VGS=10V The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 25m @ VGS=4.5V effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are... See More ⇒

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ME7804S-G

ME7804S-G N-Channel 30V (D-S) MOSFET, ESD Protected D GENERAL DESCRIPTION FEATURES The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 16m @VGS=10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 25m @ VGS=4.5V technology. This high density process is especially tailored to minimize on-state resistance. These devices are pa... See More ⇒

 9.1. Size:890K  matsuki electric
 me7805s me7805s-g.pdf pdf_icon

ME7804S-G

ME7805S/ME7805S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7805S is the P-Channel logic enhancement mode power field RDS(ON) 7m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 12m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS... See More ⇒

 9.2. Size:959K  matsuki electric
 me7807s me7807s-g.pdf pdf_icon

ME7804S-G

ME7807S/ME7807S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7807S is the P-Channel logic enhancement mode power field RDS(ON) 15m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 29.5m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low ... See More ⇒

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Detailed specifications: ME60P06T, ME60P06T-G, ME66N04T, ME6968ED, ME6968ED-G, ME6980ED, ME6980ED-G, ME7114S-G, 13N50, ME7839S-G, ME80N08A, ME80N08A-G, ME80N75F-G, ME80N75T, ME80N75T-G, ME8107, ME8107-G

Keywords - ME7804S-G MOSFET specs

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