ME80N08A MOSFET. Datasheet pdf. Equivalent
Type Designator: ME80N08A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 194 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 221 nC
trⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 1150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO-220
ME80N08A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME80N08A Datasheet (PDF)
me80n08a me80n08a-g.pdf
ME80N08A/ME80N08A-G N-Channel 80V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density p
me80n08ah me80n08ah-g.pdf
ME80N08AH/ME80N08AH-G 80V N-Channel Enhancement Mode GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08AH is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high
me80n08af me80n08af-g.pdf
ME80N08AF/ME80N08AF-G N-Channel 80V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08AF is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densi
me80n75f me80n75fg.pdf
ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den
me80n75f me80n75f-g.pdf
ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den
me80n75t me80n75t-g.pdf
ME80N75T / ME80N75T-GN- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .