All MOSFET. ME80N75T Datasheet

 

ME80N75T Datasheet and Replacement


   Type Designator: ME80N75T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 93 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 437 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-220
 

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ME80N75T Datasheet (PDF)

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 me80n75t me80n75t-g.pdf pdf_icon

ME80N75T

ME80N75T / ME80N75T-GN- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

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 me80n75f me80n75fg.pdf pdf_icon

ME80N75T

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

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 me80n75f me80n75f-g.pdf pdf_icon

ME80N75T

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

 9.1. Size:1244K  matsuki electric
 me80n08a me80n08a-g.pdf pdf_icon

ME80N75T

ME80N08A/ME80N08A-G N-Channel 80V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density p

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Datasheet: ME6980ED , ME6980ED-G , ME7114S-G , ME7804S-G , ME7839S-G , ME80N08A , ME80N08A-G , ME80N75F-G , IRF1407 , ME80N75T-G , ME8107 , ME8107-G , ME8205E , ME8205E-G , ME85P03 , ME85P03-G , ME90N03 .

Keywords - ME80N75T MOSFET datasheet

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