ME80N75T-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME80N75T-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 93 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 134 nC
trⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 437 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-220
ME80N75T-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME80N75T-G Datasheet (PDF)
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