JCS10N60FT Datasheet and Replacement
Type Designator: JCS10N60FT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 59.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 121 nS
Cossⓘ - Output Capacitance: 167 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO-220MF
JCS10N60FT substitution
JCS10N60FT Datasheet (PDF)
jcs10n60bt jcs10n60st jcs10n60ct jcs10n60ft.pdf

N RN-CHANNEL MOSFET JCS10N60T Package MAIN CHARACTERISTICS ID 9.5 A VDSS 600 V Rdson 0.75 @Vgs=10VQg 37.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
jcs10n60f jcs10n60c.pdf

R JCS10N60C JCS10N60C MAIN CHARACTERISTICS Package ID 10 A VDSS 600 V Rdson-max 0.85 Vgs=10V Qg-Typ 51.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES
jcs10n65f.pdf

R JCS10N65FC JCS10N65FC Package MAIN CHARACTERISTICS ID 10 A 650 V VDSS 1.0 Rdson-max@Vgs=10V Qg-Typ 54 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES
jcs10n65bt jcs10n65st jcs10n65ct jcs10n65ft.pdf

N RN-CHANNEL MOSFET JCS10N65T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 650 V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURE
Datasheet: MEE15N10-G , MEE3710-G , MEE4294-G , MESS84 , JCS10N60BT , JCS10N60CC , JCS10N60CT , JCS10N60FC , IRF830 , JCS10N60ST , JCS10N65BT , JCS10N65CT , JCS10N65FC , JCS10N65FT , JCS10N65ST , KCB3008A , KCF3650A .
History: FQP7N10 | 5N90A | 4N60AF | CJ3400 | IPS60R1K0PFD7S | 7N80L-TA3-T | IPS60R400CE
Keywords - JCS10N60FT MOSFET datasheet
JCS10N60FT cross reference
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History: FQP7N10 | 5N90A | 4N60AF | CJ3400 | IPS60R1K0PFD7S | 7N80L-TA3-T | IPS60R400CE



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