STH26N25 Datasheet and Replacement
Type Designator: STH26N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO218
STH26N25 substitution
STH26N25 Datasheet (PDF)
sth260n6f6-2.pdf

STH260N6F6-2N-channel 60 V, 1.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in HPAK-2 packageDatasheet production dataFeaturesOrder code VDSS RDS(on) max IDTABSTH260N6F6-2 60 V
sth260n6f6-6.pdf

STH260N6F6-6N-channel 60 V, 1.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in HPAK-6 packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max IDSTH260N6F6-6 60 V 2.4 m 180 ATAB Low gate charge Very low on-resistance7 High avalanche ruggedness11ApplicationsH2PAK-6 Switching applicationsDescriptionFigure 1. Internal sch
sth265n6f6-2ag sth265n6f6-6ag.pdf

STH265N6F6-2AG, STH265N6F6-6AG Automotive N-channel 60 V, 1.6 m typ., 180 A STripFET F6 Power MOSFET in HPAK-2 and HPAK-6 packages Datasheet - production data Features Order code V R max I DS DS(on) DTABTABSTH265N6F6-2AG 60 V 2.1 m 180 A STH265N6F6-6AG 60 V 2.1 m 180 A 7231 Designed for automotive applications 1 Very low on-resistance
Datasheet: STH12NA60 , STH12NA60FI , STH14N50 , STH14N50FI , STH15N50 , STH15N50FI , STH15NA50 , STH15NA50FI , 18N50 , STH26N25FI , STH33N20 , STH33N20FI , STH45N10 , STH45N10FI , STH4N80 , STH4N80FI , STH4N90 .
History: HBS170 | TMP6N70 | SE150180GTS
Keywords - STH26N25 MOSFET datasheet
STH26N25 cross reference
STH26N25 equivalent finder
STH26N25 lookup
STH26N25 substitution
STH26N25 replacement
History: HBS170 | TMP6N70 | SE150180GTS



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