STH26N25 Datasheet. Specs and Replacement

Type Designator: STH26N25  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO218

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STH26N25 datasheet

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STH26N25

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STH26N25

STH260N6F6-2 N-channel 60 V, 1.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in H PAK-2 package Datasheet production data Features Order code VDSS RDS(on) max ID TAB STH260N6F6-2 60 V ... See More ⇒

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STH26N25

STH260N6F6-6 N-channel 60 V, 1.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in H PAK-6 package Datasheet - preliminary data Features Order code VDS RDS(on) max ID STH260N6F6-6 60 V 2.4 m 180 A TAB Low gate charge Very low on-resistance 7 High avalanche ruggedness 1 1 Applications H2PAK-6 Switching applications Description Figure 1. Internal sch... See More ⇒

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STH26N25

STH265N6F6-2AG, STH265N6F6-6AG Automotive N-channel 60 V, 1.6 m typ., 180 A STripFET F6 Power MOSFET in H PAK-2 and H PAK-6 packages Datasheet - production data Features Order code V R max I DS DS(on) D TAB TAB STH265N6F6-2AG 60 V 2.1 m 180 A STH265N6F6-6AG 60 V 2.1 m 180 A 7 2 3 1 Designed for automotive applications 1 Very low on-resistance ... See More ⇒

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Detailed specifications: STH12NA60, STH12NA60FI, STH14N50, STH14N50FI, STH15N50, STH15N50FI, STH15NA50, STH15NA50FI, CS150N04A8, STH26N25FI, STH33N20, STH33N20FI, STH45N10, STH45N10FI, STH4N80, STH4N80FI, STH4N90

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