All MOSFET. KCM3650A Datasheet

 

KCM3650A Datasheet and Replacement


   Type Designator: KCM3650A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 379 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 66 nC
   tr ⓘ - Rise Time: 148 nS
   Cossⓘ - Output Capacitance: 4400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: TO-247
 

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KCM3650A Datasheet (PDF)

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KCM3650A

60A500VKCX3650AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis high voltage MOSFETuses an advanced termination schemeto provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced MOSFET isdesigned to withstand high energy in avalanche and commutation modes. The newenergy efficient

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Keywords - KCM3650A MOSFET datasheet

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