All MOSFET. KIA10N65H Datasheet

 

KIA10N65H MOSFET. Datasheet pdf. Equivalent


   Type Designator: KIA10N65H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 52 W
   Maximum Drain-Source Voltage |Vds|: 650 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 10 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 48 nC
   Rise Time (tr): 70 nS
   Drain-Source Capacitance (Cd): 1665 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
   Package: TO220F

 KIA10N65H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KIA10N65H Datasheet (PDF)

 ..1. Size:289K  kia
 kia10n65h.pdf

KIA10N65H KIA10N65H

10A650V10N65HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA10N65HN-Channel enhancement mode silicon gate power MOSFETis designedfor high voltage, high speed power switching applications such as high efficiency switched mode powersupplies, active power factor correction,electronic lampballasts based on half bridge to pology.2.

 8.1. Size:259K  kia
 kia10n80h.pdf

KIA10N65H KIA10N65H

10A800V10N80HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThis Power MOSFET is produced using KIA advanced planar stripe DMOS technology. Thisadvanced has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. These device

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top