KIA10N80H-220F Datasheet and Replacement
Type Designator: KIA10N80H-220F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 135 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO220F
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KIA10N80H-220F Datasheet (PDF)
kia10n80h.pdf

10A800V10N80HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThis Power MOSFET is produced using KIA advanced planar stripe DMOS technology. Thisadvanced has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. These device
kia10n65h.pdf

10A650V10N65HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA10N65HN-Channel enhancement mode silicon gate power MOSFETis designedfor high voltage, high speed power switching applications such as high efficiency switched mode powersupplies, active power factor correction,electronic lampballasts based on half bridge to pology.2.
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FCPF7N60YDTU | SM6A12NSFP | AP6679GI-HF | H7N1002LM | SPD04N60S5
Keywords - KIA10N80H-220F MOSFET datasheet
KIA10N80H-220F cross reference
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History: FCPF7N60YDTU | SM6A12NSFP | AP6679GI-HF | H7N1002LM | SPD04N60S5



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