All MOSFET. KIA12N60H-220F Datasheet

 

KIA12N60H-220F Datasheet and Replacement


   Type Designator: KIA12N60H-220F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220F
 

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KIA12N60H-220F Datasheet (PDF)

 5.1. Size:434K  kia
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KIA12N60H-220F

12A600V12N60HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA12N60H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as high efficiency switched mode power supplies,active power factor correction, electronic lamp ballasts based on half bridge topology.

 7.1. Size:305K  kia
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KIA12N60H-220F

12A650V12N65HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA12N65H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as high efficiency switched mode power supplies,active power factor correction, electronic lamp ballasts based on half bridge topology.

Datasheet: KCF9860A , KCM9860A , KCY3104S , KCY3303S , KIA10N65H , KIA10N80H-220F , KIA10N80H-3P , KIA12N60H-220 , MMD60R360PRH , KIA12N65H , KIA13N50H-220 , KIA13N50H-220F , KIA13N50H-263 , KIA18N50H-220F , KIA18N50H-247 , KIA20N50H-220F , KIA20N50H-247 .

History: FQPF10N60CF

Keywords - KIA12N60H-220F MOSFET datasheet

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