All MOSFET. KIA13N50H-263 Datasheet

 

KIA13N50H-263 Datasheet and Replacement


   Type Designator: KIA13N50H-263
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO263
 

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KIA13N50H-263 Datasheet (PDF)

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KIA13N50H-263

13A500V13N50HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThe KIA13N50H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as high efficiency switched mode power supplies,active power factor correction, electronic lamp ballasts based on half bridge topology

Datasheet: KIA10N65H , KIA10N80H-220F , KIA10N80H-3P , KIA12N60H-220 , KIA12N60H-220F , KIA12N65H , KIA13N50H-220 , KIA13N50H-220F , AO4468 , KIA18N50H-220F , KIA18N50H-247 , KIA20N50H-220F , KIA20N50H-247 , KIA20N50H-3P , KIA2300 , KIA2301 , KIA2302 .

Keywords - KIA13N50H-263 MOSFET datasheet

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