KIA18N50H-247 Datasheet and Replacement
Type Designator: KIA18N50H-247
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 235 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 190 nS
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
Package: TO247
KIA18N50H-247 Datasheet (PDF)
kia18n50h.pdf

18A500V18N50HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThe KIA18N50H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as high efficiency switched mode power supplies,active power factor correction.2. Features R =0.25 @V =10VDS(on) GS Lowgate c
Datasheet: KIA10N80H-3P , KIA12N60H-220 , KIA12N60H-220F , KIA12N65H , KIA13N50H-220 , KIA13N50H-220F , KIA13N50H-263 , KIA18N50H-220F , IRFP064N , KIA20N50H-220F , KIA20N50H-247 , KIA20N50H-3P , KIA2300 , KIA2301 , KIA2302 , KIA2305 , KIA2306 .
History: 4N60KL-TM3-T | WMLL020N10HGS
Keywords - KIA18N50H-247 MOSFET datasheet
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History: 4N60KL-TM3-T | WMLL020N10HGS



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