All MOSFET. KIA18N50H-247 Datasheet

 

KIA18N50H-247 Datasheet and Replacement


   Type Designator: KIA18N50H-247
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 235 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO247
 

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KIA18N50H-247 Datasheet (PDF)

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KIA18N50H-247

18A500V18N50HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThe KIA18N50H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as high efficiency switched mode power supplies,active power factor correction.2. Features R =0.25 @V =10VDS(on) GS Lowgate c

Datasheet: KIA10N80H-3P , KIA12N60H-220 , KIA12N60H-220F , KIA12N65H , KIA13N50H-220 , KIA13N50H-220F , KIA13N50H-263 , KIA18N50H-220F , IRFP064N , KIA20N50H-220F , KIA20N50H-247 , KIA20N50H-3P , KIA2300 , KIA2301 , KIA2302 , KIA2305 , KIA2306 .

History: R6515ENZ | WMN25N80M3

Keywords - KIA18N50H-247 MOSFET datasheet

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