STH33N20 Specs and Replacement
Type Designator: STH33N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO218
STH33N20 substitution
- MOSFET ⓘ Cross-Reference Search
STH33N20 datasheet
Detailed specifications: STH14N50 , STH14N50FI , STH15N50 , STH15N50FI , STH15NA50 , STH15NA50FI , STH26N25 , STH26N25FI , IRFP250 , STH33N20FI , STH45N10 , STH45N10FI , STH4N80 , STH4N80FI , STH4N90 , STH4N90FI , STH55N10 .
Keywords - STH33N20 MOSFET specs
STH33N20 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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