KIA2305 MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA2305
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 3.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 375 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOT23
KIA2305 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA2305 Datasheet (PDF)
kia2305.pdf
-3.5A-20V2305P-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features V =-20V,R =0.055@V =-4.5V,I =-3.5ADS DS(on) GS D V =-20V,R =0.075@V =-2.5V,I =-3.0ADS DS(on) GS D V =-20V,R =0.095@V =-1.8V,I =-1.8ADS DS(on) GS D2.SymbolPin Function1 Gate2 Source3 Drain3. Absolute maximumratingsParameter Symbol Rating UnitsDrain-sou
kia2302.pdf
N-CHANNELENHANCEMENT MODE FIELD EFFECT TRANSISTORKIA2302SEMICONDUCTORS1.DescriptionThe KIA2302 is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.Because high-speed switching is possible,the IC can be efficiently set therebysaving energy. In order to counter static, a gate protect diode is built-in. The small SOT23 package ma
kia2306.pdf
3.5A 30V2306N-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features V =30V,R =0.057@V =10V,I =3.5ADS DS(on) GS D V =30V,R =0.094@V =4.5V,I =2.8ADS DS(on) GS D Power MOSFET 100% R testedg2.SymbolPin Function1 Gate2 Source3 Drain3. Absolute maximumratings(T =25C,unless otherwise noted)AParameter Symbol Rating Units
kia2300.pdf
MOSFET TRANSISTORS 2300 KIA SEMICONDUCTORS 1. Features VDS=20V,RDS(ON)=30m@ VGS=10V,ID=6.0A VDS=20V,RDS(ON)=40m@ VGS=4.5V,ID=3.0A VDS=20V,RDS(ON)=55m@ VGS=2.5V,ID=2.0A 2. Pin information DPin Function 1 GateG 2 Source3 DrainS3. Maximum ratings (Ta=25C) Characteristic Symbol Rating Unit Drain-source voltage VDS 20 VGate-source volt
kia2301.pdf
-2.8A-20V2301P-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features V =-20V,R =0.12@V =-4.5V,I =-2.8ADS DS(on) GS D V =-20V,R =0.19@V =-2.5V,I =-1.8ADS DS(on) GS D2.SymbolPin Function1 Gate2 Source3 Drain3. Absolute maximumratingsParameter Symbol Rating UnitsDrain-source voltage V -20 VDSGate-source voltage V +8 VGS
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
