KIA2404A-220 MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA2404A-220
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 224 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 190 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 96 nS
Cossⓘ - Output Capacitance: 950 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO220
KIA2404A-220 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA2404A-220 Datasheet (PDF)
kia2404a.pdf
190A40V2404AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Applications DC-DCconverters and Off-line UPS Switching applications2. Features R =2.2m @V =10 VDS(on) (TYP) GSSuper high dense cell design Ultra lowon-resistance 100%avalanchetest Lead free and green devices available (RoHScompliant)3. PinconfigurationPin Function1 Ga
kia24n50h.pdf
24A500V24N50HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFET is produced using KIAadvanced planar stripe DMOS technology. This advancedtechnology has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. The
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