STH33N20FI PDF and Equivalents Search

 

STH33N20FI Specs and Replacement

Type Designator: STH33N20FI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 600 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: ISOWATT218

STH33N20FI substitution

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STH33N20FI datasheet

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STH33N20FI

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Detailed specifications: STH14N50FI , STH15N50 , STH15N50FI , STH15NA50 , STH15NA50FI , STH26N25 , STH26N25FI , STH33N20 , IRF1407 , STH45N10 , STH45N10FI , STH4N80 , STH4N80FI , STH4N90 , STH4N90FI , STH55N10 , STH55N10FI .

Keywords - STH33N20FI MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 


 
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