KIA2808A-220 MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA2808A-220
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 152 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 995 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO220
KIA2808A-220 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA2808A-220 Datasheet (PDF)
kia2808a.pdf
150A80V2808AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =4.0mtyp.@V =10VDS(on) GS 100%avalanchetested Reliable and rugged Lead free and green device availableRoHSCompliant2. Applications Switching application Power management for inverter systems3.SymbolPin Function1 Gate2 Drain3 Source4 Drain1
kia2806a.pdf
150A60V2806AN-CHANNEL MOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS01. Features R =3.5mtyp.@ V =10VDS(on) GS 100% avalanche tested Reliable and rugged Lead free and green device availableRoHS Compliant2. Applications Switching application Power management for inverter systems UPS3.SymbolPin Function1
kia2803a.pdf
150A30V2803AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =2.2mtyp.@V =10VDS(on) GS LowOn-Resistance Fast Switching 100%AvalancheTested RepetitiveAvalancheAllowed up toTjmax Lead-Free, RoHSCompliant2. FeaturesKIA2803A designed by the trench processing techniques to achieve extremely low on-resistance.Additional
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
