STH45N10 PDF and Equivalents Search

 

STH45N10 Specs and Replacement

Type Designator: STH45N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 600 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO218

STH45N10 substitution

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STH45N10 datasheet

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STH45N10

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Detailed specifications: STH15N50 , STH15N50FI , STH15NA50 , STH15NA50FI , STH26N25 , STH26N25FI , STH33N20 , STH33N20FI , 2SK3568 , STH45N10FI , STH4N80 , STH4N80FI , STH4N90 , STH4N90FI , STH55N10 , STH55N10FI , STH5N90 .

Keywords - STH45N10 MOSFET specs

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