KIA4603A Datasheet and Replacement
Type Designator: KIA4603A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 77 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP-8
KIA4603A substitution
KIA4603A Datasheet (PDF)
kia4603a.pdf

7A30V4603AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =14.5m(typ)@V =10 VDS(on) GSSuper lowgate charge Green device available Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KIA4603Ais the high cell density trenched N-ch MOSFETs, which provide excellent RDSONand gate charge f
Datasheet: KIA3401 , KIA3402 , KIA3407 , KIA3414 , KIA3415 , KIA3510A-220 , KIA3510A-252 , KIA3510A-263 , IRFB3607 , KIA4706A , KIA4750S-252 , KIA4750S-220 , KIA4N60H-251 , KIA4N60H-252 , KIA4N60H-220 , KIA4N60H-220F , KIA4N60H-262 .
History: IRF830ASTRL-FP | RD3L150SN | WML6N100D1 | RU9N65P | EMA09N03AN | SI5456DU | MTD140P15J3
Keywords - KIA4603A MOSFET datasheet
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History: IRF830ASTRL-FP | RD3L150SN | WML6N100D1 | RU9N65P | EMA09N03AN | SI5456DU | MTD140P15J3



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