All MOSFET. KIA4706A Datasheet

 

KIA4706A Datasheet and Replacement


   Type Designator: KIA4706A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP-8
 

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KIA4706A Datasheet (PDF)

 ..1. Size:223K  kia
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KIA4706A

8A60V4706AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =10m(typ)@ V =10 VDS(on) GS Super low gate charge Green device available Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KIA4706Ais the high cell density trenched N-ch MOSFETs, which provide excellent RDSONand gate charge

 9.1. Size:363K  kia
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KIA4706A

9A500VN-CHANNELMOSFET4750SKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Applications Adaptor Charger SMPSStandby Power2. Features RoHSCompliant R =0.7 @V =10 VDS(on) GSLowgate charge minimize switching loss Fast recovery body diode3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Drain1of 6 Rev 1.0Mar. 20169A500VN-CHANNE

Datasheet: KIA3402 , KIA3407 , KIA3414 , KIA3415 , KIA3510A-220 , KIA3510A-252 , KIA3510A-263 , KIA4603A , AO4407 , KIA4750S-252 , KIA4750S-220 , KIA4N60H-251 , KIA4N60H-252 , KIA4N60H-220 , KIA4N60H-220F , KIA4N60H-262 , KIA4N65H-251 .

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