KIA4706A MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA4706A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.5 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 30 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 210 pF
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: SOP-8
KIA4706A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA4706A Datasheet (PDF)
kia4706a.pdf
8A60V4706AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =10m(typ)@ V =10 VDS(on) GS Super low gate charge Green device available Excellent Cdv/dt effect decline Advanced high cell density trench technology2.DescriptionThe KIA4706Ais the high cell density trenched N-ch MOSFETs, which provide excellent RDSONand gate charge
kia4750s.pdf
9A500VN-CHANNELMOSFET4750SKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Applications Adaptor Charger SMPSStandby Power2. Features RoHSCompliant R =0.7 @V =10 VDS(on) GSLowgate charge minimize switching loss Fast recovery body diode3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Drain1of 6 Rev 1.0Mar. 20169A500VN-CHANNE
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