KIA4N60H-220F Datasheet and Replacement
Type Designator: KIA4N60H-220F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: TO220F
KIA4N60H-220F substitution
KIA4N60H-220F Datasheet (PDF)
kia4n60h.pdf

4.0A600VN-CHANNELMOSFET4N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers.2. Features R =2.3@V =10VDS(ON) GS Lowgate cha
kia4n65h.pdf

4.0A650VN-CHANNELMOSFET4N65HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThis Power MOSFET is produced using KIA advanced planar stripe DMOS technology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes
Datasheet: KIA3510A-263 , KIA4603A , KIA4706A , KIA4750S-252 , KIA4750S-220 , KIA4N60H-251 , KIA4N60H-252 , KIA4N60H-220 , IRLZ44N , KIA4N60H-262 , KIA4N65H-251 , KIA4N65H-252 , KIA4N65H-220 , KIA4N65H-220F , KIA50N03-251 , KIA50N03-252 , KIA50N03-220 .
History: RU40C20M3 | STB20NM50-1 | TMAN20N50 | SWD2N60DC | NTTFS4C10NTAG | JSM2302 | IRLTS2242PBF
Keywords - KIA4N60H-220F MOSFET datasheet
KIA4N60H-220F cross reference
KIA4N60H-220F equivalent finder
KIA4N60H-220F lookup
KIA4N60H-220F substitution
KIA4N60H-220F replacement
History: RU40C20M3 | STB20NM50-1 | TMAN20N50 | SWD2N60DC | NTTFS4C10NTAG | JSM2302 | IRLTS2242PBF



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