KIA4N65H-252 MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA4N65H-252
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 58 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO252
KIA4N65H-252 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA4N65H-252 Datasheet (PDF)
kia4n65h.pdf
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