KIA6035A MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA6035A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 99 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 23.5 nS
Cossⓘ - Output Capacitance: 162 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220 TO252
KIA6035A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA6035A Datasheet (PDF)
..1. Size:252K kia
kia6035a.pdf
kia6035a.pdf
11A, 350VN-CHANNELMOSFET6035AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation mode. Th
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