KIA6035A Specs and Replacement

Type Designator: KIA6035A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 99 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 15 nC

tr ⓘ - Rise Time: 23.5 nS

Cossⓘ - Output Capacitance: 162 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO220 TO252

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KIA6035A datasheet

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KIA6035A

11A, 350V N-CHANNELMOSFET 6035A KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description This Power MOSFET is produced using KIA s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Th... See More ⇒

Detailed specifications: KIA4N65H-220F, KIA50N03-251, KIA50N03-252, KIA50N03-220, KIA50N03BD, KIA50N06B-220, KIA5610A, KIA5N60E, 2SK3568, KIA65R190, KIA65R300, KIA65R420, KIA65R700, KIA65R950, KIA6N70H-251, KIA6N70H-252, KIA6N70H-220F

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