KIA7N60H-263 MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA7N60H-263
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 27 nC
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 100 pF
Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
Package: TO263
KIA7N60H-263 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA7N60H-263 Datasheet (PDF)
kia7n60h.pdf
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History: STB10N95K5
