STH55N10FI Specs and Replacement
Type Designator: STH55N10FI
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 270 nS
Cossⓘ - Output Capacitance: 1100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: ISOWATT218
STH55N10FI substitution
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STH55N10FI datasheet
Detailed specifications: STH33N20FI , STH45N10 , STH45N10FI , STH4N80 , STH4N80FI , STH4N90 , STH4N90FI , STH55N10 , 20N50 , STH5N90 , STH5N90FI , STH60N10 , STH60N10FI , STH65N05 , STH65N05FI , STH65N06 , STH65N06FI .
Keywords - STH55N10FI MOSFET specs
STH55N10FI cross reference
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STH55N10FI replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: STH55N10 | STH5N90
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