KNB2910A Specs and Replacement
Type Designator: KNB2910A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 91 nS
Cossⓘ - Output Capacitance: 630 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO263
KNB2910A substitution
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KNB2910A datasheet
knb2910a knp2910a knh2910a.pdf
130A 100V KNX2910A N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Applications High efficiency synchronous rectification in SMPS High speed power switching 2. Features R =5.0m @V =10 V DS(on) GS Super high dense cell design Ultra lowOn-Resistance 100%avalanchetested Lead Free and Green devices available (RoHSCompliant) 3. Pinconfiguratio... See More ⇒
knp2915a knb2915a.pdf
130A 150V N-CHANNEL MOSFET KNX2915A KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features RDS(ON)= 10m ( typ.)@ VGS=10V Uses CRM(CQ) advanced Trench technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Qualified according to JEDEC criteria 2. Application Motor control and drive Battery management UPS... See More ⇒
knd2906a knb2906a.pdf
130A 60V KNX2906A N-CHANNEL MOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Features R =5.5m (typ.)@ V =10V DS(on) GS Lead free and green device available Low Rds-on to minimize conductive loss High avalanche current 2. Applications Power Supply UPS Power Tool 3.Symbol Pin Function 1 Gate 2 Drain 3 Source 1 of 6 Rev 1.2 ... See More ⇒
Detailed specifications: KNB1906A, KNB2404A, KNB2708A, KNB2710A, KNB2803A, KNB2804A, KNB2804C, KNB2906A, 60N06, KNB2915A, KNB3204A, KNB3206A, KNB3208A, KNB3306B, KNB3308B, KNB3508A, KND2803A
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