STH5N90 PDF and Equivalents Search

 

STH5N90 Specs and Replacement

Type Designator: STH5N90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 165 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO218

STH5N90 substitution

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STH5N90 datasheet

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STH5N90

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Detailed specifications: STH45N10 , STH45N10FI , STH4N80 , STH4N80FI , STH4N90 , STH4N90FI , STH55N10 , STH55N10FI , IRF520 , STH5N90FI , STH60N10 , STH60N10FI , STH65N05 , STH65N05FI , STH65N06 , STH65N06FI , STH6N100 .

Keywords - STH5N90 MOSFET specs

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