All MOSFET. KNF6165A Datasheet

 

KNF6165A MOSFET. Datasheet pdf. Equivalent


   Type Designator: KNF6165A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 153 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220F

 KNF6165A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KNF6165A Datasheet (PDF)

 ..1. Size:178K  kia
knf6165a knp6165a.pdf

KNF6165A
KNF6165A

10A650VN-CHANNELMOSFETKNX6165AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionTheKNX6165A-Channel enhancement modesilicongatepower MOSFETis designedfor highvoltage,high speed power switching applications such as high efficiency switched mode power supplies, activepower factor correction, electronic lamp ballasts based on half bridge topology2. Featu

 7.1. Size:1562K  kia
knp6165b knf6165b.pdf

KNF6165A
KNF6165A

10A650VKNX6165BN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features RoHSCompliant R ,typ.=0.75 @V =10VDS(ON) GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2. Applications Adaptor Charger SMPSStandby Power3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Drain1 of 9 Rev 1.0. May. 201910A

 9.1. Size:773K  kia
knp6180a knf6180a.pdf

KNF6165A
KNF6165A

10A800VKNX6180AN-CHANNEL MOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary New Planar Technology R =1.0 @V =10VDS(ON),typ. GS Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications ATX Power LCD Panel Power3. Pin configurationPin Function1 Gate2 Drain3 Source4 Drain

 9.2. Size:489K  kia
knp6140a knf6140a.pdf

KNF6165A
KNF6165A

10A400V6140AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewPlanar Technology R =0.35@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications Ballast and Lighting DC-ACInverter Other Applications3. PinconfigurationPin Function1 Gate2 Drain3 Source4

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top